Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / vorgelegt von M. Eng. and Tech. Ksenia Nosaeva.

By: Nosaeva, Ksenia [author.]Material type: TextTextSeries: Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik ; Band 36Publisher: Gottingen, [Germany] : Cuvillier Verlag, 2016Copyright date: 2016Edition: 1. AuflageDescription: 1 online resource (155 pages) : illustrations (some color), tables, graphsContent type: text Media type: computer Carrier type: online resourceISBN: 9783736982871 (e-book)Subject(s): Modulation-doped field-effect transistorsGenre/Form: Electronic books.Additional physical formats: Print version:: Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz.DDC classification: 621.3815284 LOC classification: TK7871.95 | .N673 2016Online resources: Click to View
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Description based on online resource; title from PDF title page (ebrary, viewed September 29, 2017).

Electronic reproduction. Ann Arbor, MI : ProQuest, 2016. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.

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