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Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz /

Nosaeva, Ksenia,

Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / vorgelegt von M. Eng. and Tech. Ksenia Nosaeva. - 1. Auflage. - 1 online resource (155 pages) : illustrations (some color), tables, graphs. - Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik ; Band 36 .

Includes bibliographical references.

ISBN: 9783736982871 (e-book)

Subjects--Topical Terms:
Modulation-doped field-effect transistors.

Index Terms--Genre/Form:
Electronic books.

LC Class. No.: TK7871.95 / .N673 2016

Dewey Class. No.: 621.3815284

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