000 01493nam a2200397 a 4500
001 EBC826926
003 MiAaPQ
005 20240120133050.0
006 m o d |
007 cr cn|||||||||
008 111208s2012 flua sb 000 0 eng d
010 _z 2011046210
020 _z9781439807453 (hbk. alk. paper)
020 _a9781439807460 (electronic bk.)
035 _a(MiAaPQ)EBC826926
035 _a(Au-PeEL)EBL826926
035 _a(CaPaEBR)ebr10517996
035 _a(CaONFJC)MIL352545
035 _a(OCoLC)899154965
040 _aMiAaPQ
_cMiAaPQ
_dMiAaPQ
050 4 _aTK7895.M4
_bL385 2012
100 1 _aLi, Hai,
_d1975-
245 1 0 _aNonvolatile memory design
_h[electronic resource] :
_bmagnetic, resistive, and phase change /
_cHai Li, Yiran Chen.
260 _aBoca Raton, Fla. :
_bTaylor & Francis,
_cc2012.
300 _axiv, 184 p. :
_bill.
504 _aIncludes bibliographical references.
533 _aElectronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
650 0 _aSemiconductor storage devices.
650 0 _aMagnetic memory (Computers)
650 0 _aFlash memories (Computers)
650 0 _aChange of state (Physics)
_xIndustrial applications.
655 4 _aElectronic books.
700 1 _aChen, Yiran,
_d1976-
710 2 _aProQuest (Firm)
856 4 0 _uhttps://ebookcentral.proquest.com/lib/bacm-ebooks/detail.action?docID=826926
_zClick to View
999 _c72592
_d72592