000 | 01493nam a2200397 a 4500 | ||
---|---|---|---|
001 | EBC826926 | ||
003 | MiAaPQ | ||
005 | 20240120133050.0 | ||
006 | m o d | | ||
007 | cr cn||||||||| | ||
008 | 111208s2012 flua sb 000 0 eng d | ||
010 | _z 2011046210 | ||
020 | _z9781439807453 (hbk. alk. paper) | ||
020 | _a9781439807460 (electronic bk.) | ||
035 | _a(MiAaPQ)EBC826926 | ||
035 | _a(Au-PeEL)EBL826926 | ||
035 | _a(CaPaEBR)ebr10517996 | ||
035 | _a(CaONFJC)MIL352545 | ||
035 | _a(OCoLC)899154965 | ||
040 |
_aMiAaPQ _cMiAaPQ _dMiAaPQ |
||
050 | 4 |
_aTK7895.M4 _bL385 2012 |
|
100 | 1 |
_aLi, Hai, _d1975- |
|
245 | 1 | 0 |
_aNonvolatile memory design _h[electronic resource] : _bmagnetic, resistive, and phase change / _cHai Li, Yiran Chen. |
260 |
_aBoca Raton, Fla. : _bTaylor & Francis, _cc2012. |
||
300 |
_axiv, 184 p. : _bill. |
||
504 | _aIncludes bibliographical references. | ||
533 | _aElectronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries. | ||
650 | 0 | _aSemiconductor storage devices. | |
650 | 0 | _aMagnetic memory (Computers) | |
650 | 0 | _aFlash memories (Computers) | |
650 | 0 |
_aChange of state (Physics) _xIndustrial applications. |
|
655 | 4 | _aElectronic books. | |
700 | 1 |
_aChen, Yiran, _d1976- |
|
710 | 2 | _aProQuest (Firm) | |
856 | 4 | 0 |
_uhttps://ebookcentral.proquest.com/lib/bacm-ebooks/detail.action?docID=826926 _zClick to View |
999 |
_c72592 _d72592 |