000			03615nam a22004093i 4500
001			EBC6551142
003			MiAaPQ
005			20240122001335.0
006			m o d |
007			cr cnu||||||||
008			231124s2021 xx o ||||0 eng d
020			_a9783736963962 _q(electronic bk.)
020			_z9783736973961
035			_a(MiAaPQ)EBC6551142
035			_a(Au-PeEL)EBL6551142
035			_a(OCoLC)1246582541
040			_aMiAaPQ _beng _erda _epn _cMiAaPQ _dMiAaPQ
082	0		_a530
100	1		_aKaul, Thorben.
245	1	0	_aEpitaxial Design Optimizations for Increased Efficiency in GaAs-Based High Power Diode Lasers.
250			_a1st ed.
264		1	_aG�ottingen : _bCuvillier Verlag, _c2021.
264		4	_c{copy}2021.
300			_a1 online resource (137 pages)
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
490	1		_aInnovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut f�ur H�ochstfrequenztechnik ; _vv.62
505	0		_aIntro -- Contents -- List of Publications -- Abstract -- Kurzfassung -- 1 Introduction -- 1.1 Structure and method of this work -- 2 Fundamentals -- 2.1 Laser technology and market context -- 2.2 Fabrication technology -- 2.3 Mathematical framework of semiconductor lasers -- 2.4 Parameters for characterization of broad area diode lasers -- 2.5 Simulation tools -- 2.6 Device configurations and measurement setups -- 3 Literature Review, Prior State of the Art and Target Specifications -- 3.1 Power and efficiency limiting effects - an overview -- 3.2 Target specifications -- 3.3 Prior state of the art high power diode lasers and laser bars -- 4 Novel Epitaxial Layer-Stack Design for Increased Efficiency -- 4.1 General epitaxial design considerations -- 4.2 Prior state of the art epitaxial design concepts and their limits -- 4.3 ETAS: The novel extreme triple asymmetric design concept -- 5 Diagnosis and Analysis of Power Limiting Mechanisms -- 5.1 Devices designed and used for diagnosis -- 5.2 Quantifying thermal- and bias-driven contributions to rollover -- 5.3 Bias-driven power limitations -- 5.4 Thermal-driven power limitations -- 6 Performance of Diode Lasers Using Optimized VerticalDesigns -- 6.1 Impact of optical confinement on T0 and T1 -- 6.2 Measurement results of diode laser bars -- 6.3 Short-term perspective for further improved performance -- 7 Conclusion and Outlook -- 7.1 The role of optical loss in thermal power saturation -- 7.2 The role of internal differential quantum efficiency in thermal power saturation -- 7.3 Performance of optimized devices using the novel ETAS design -- 7.4 Outlook -- 8 Acknowledgements -- A Appendix -- B List of Abbreviations -- Bibliography.
588			_aDescription based on publisher supplied metadata and other sources.
590			_aElectronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2023. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries.
655		4	_aElectronic books.
776	0	8	_iPrint version: _aKaul, Thorben _tEpitaxial Design Optimizations for Increased Efficiency in GaAs-Based High Power Diode Lasers _dG�ottingen : Cuvillier Verlag,c2021 _z9783736973961
797	2		_aProQuest (Firm)
830		0	_aInnovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut f�ur H�ochstfrequenztechnik
856	4	0	_uhttps://ebookcentral.proquest.com/lib/bacm-ebooks/detail.action?docID=6551142 _zClick to View
999			_c307243 _d307243