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008 150610t20152015sw ob 000 0 eng d
020 _a9789175190846 (e-book)
035 _a(MiAaPQ)EBC3433608
035 _a(Au-PeEL)EBL3433608
035 _a(CaPaEBR)ebr11060839
035 _a(OCoLC)932310602
040 _aMiAaPQ
_beng
_erda
_epn
_cMiAaPQ
_dMiAaPQ
050 4 _aTK7871.85
_b.L5 2015
082 0 _a621.38152
_223
100 1 _aLi, Xun,
_eauthor.
245 1 0 _aCVD solutions for new directions in SiC and GaN epitaxy /
_cXun Li.
264 1 _aLinkoping, Sweden :
_bSemiconductor Materials Division Department of Physics, Chemistry and Biology (IFM), Linkoping University,
_c2015.
264 4 _c2015
300 _a1 online resource (55 pages).
336 _atext
_2rdacontent
337 _acomputer
_2rdamedia
338 _aonline resource
_2rdacarrier
490 1 _aLinkoping Studies in Science and Technology. Dissertations,
_x0345-7524 ;
_vNumber 1654
504 _aIncludes bibliographical references.
588 _aDescription based on online resource; title from PDF title page (ebrary, viewed June 10, 2015).
590 _aElectronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
650 0 _aWide gap semiconductors
_xMaterials.
650 0 _aGallium nitride.
650 0 _aOptoelectronic devices.
655 4 _aElectronic books.
797 2 _aProQuest (Firm)
830 0 _aLinkoping studies in science and technology.
_pDissertations ;
_vNumber 1654.
856 4 0 _uhttps://ebookcentral.proquest.com/lib/bacm-ebooks/detail.action?docID=3433608
_zClick to View
999 _c225037
_d225037