| 000 | 01372nam a2200361 a 4500 | ||
|---|---|---|---|
| 001 | EBC3320073 | ||
| 003 | MiAaPQ | ||
| 005 | 20240121043328.0 | ||
| 006 | m o d | | ||
| 007 | cr cn||||||||| | ||
| 008 | 130822s2012 gw ad sbm 000 0 eng d | ||
| 020 | _z9783862193646 | ||
| 020 | _z9783862193653 (e-book) | ||
| 035 | _a(MiAaPQ)EBC3320073 | ||
| 035 | _a(Au-PeEL)EBL3320073 | ||
| 035 | _a(CaPaEBR)ebr10745533 | ||
| 035 | _a(OCoLC)859157541 | ||
| 040 |
_aMiAaPQ _cMiAaPQ _dMiAaPQ |
||
| 050 | 4 |
_aTK7871.95 _b.F56 2012 |
|
| 100 | 1 | _aFlores, Jaime Alberto Zamudio. | |
| 245 | 1 | 0 |
_aDevice characterization and modeling of large-size GaN HEMTs _h[electronic resource] / _cJaime Alberto Zamudio Flores. |
| 260 |
_aKassel : _bKassel University Press, _c2012. |
||
| 300 |
_axxxiii, 221 p. : _bill. |
||
| 502 | _aDissertation--Kassel Univ., 2012. | ||
| 504 | _aIncludes bibliographical references. | ||
| 533 | _aElectronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries. | ||
| 650 | 0 | _aModulation-doped field-effect transistors. | |
| 650 | 0 | _aGallium nitride. | |
| 650 | 0 | _aWide gap semiconductors. | |
| 655 | 4 | _aElectronic books. | |
| 710 | 2 | _aProQuest (Firm) | |
| 856 | 4 | 0 |
_uhttps://ebookcentral.proquest.com/lib/bacm-ebooks/detail.action?docID=3320073 _zClick to View |
| 999 |
_c189795 _d189796 |
||