Nosaeva, Ksenia, <br/><br/>
Indium phosphide HBT in thermally optimized periphery for applications up to 300 GHz / 
vorgelegt von M. Eng. and Tech. Ksenia Nosaeva. 
 - 1. Auflage. 
 - 1 online resource (155 pages) :  illustrations (some color), tables, graphs. 
 - Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut fur Hochstfrequenztechnik ;  Band 36 .
<br/><br/>Includes bibliographical references. 
<br/><br/><label>ISBN: </label>9783736982871 (e-book) 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Modulation-doped field-effect transistors.
<br/><br/><label>Index Terms--Genre/Form: </label><br/>Electronic books.
<br/><br/><label>LC Class. No.: </label>TK7871.95  / .N673 2016 
<br/><br/><label>Dewey Class. No.: </label>621.3815284