Device characterization and modeling of large-size GaN HEMTs [electronic resource] /
Jaime Alberto Zamudio Flores.
- Kassel : Kassel University Press, 2012.
- xxxiii, 221 p. : ill.
Dissertation--Kassel Univ., 2012.
Includes bibliographical references.
Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
Modulation-doped field-effect transistors. Gallium nitride. Wide gap semiconductors.