Device characterization and modeling of large-size GaN HEMTs [electronic resource] / Jaime Alberto Zamudio Flores.
Material type: TextPublication details: Kassel : Kassel University Press, 2012Description: xxxiii, 221 p. : illSubject(s): Modulation-doped field-effect transistors | Gallium nitride | Wide gap semiconductorsGenre/Form: Electronic books.LOC classification: TK7871.95 | .F56 2012Online resources: Click to View Dissertation note: Dissertation--Kassel Univ., 2012.No physical items for this record
Dissertation--Kassel Univ., 2012.
Includes bibliographical references.
Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
There are no comments on this title.